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Model: ERA-010060-20W-28P-MOD-A | E-REON P/N: Z-000045

RF Power Amplifier Module, 1–6 GHz, 20 W, +28 V
Wideband RF Power Amplifier with Integrated Monitoring

1–6 GHz · 20 W CW · 43–45 dB gain · +28 V · Integrated current & temperature sensors

Wideband RF power amplifier module designed for CW and pulsed signals in the 1–6 GHz range. Integrated current and temperature sensors provide monitoring and safe system integration.

1–6 GHz 20 W CW 43–45 dB gain +28 V Usually in stock
Frequency
1–6 GHz
Output power
20 W
Gain
43–45 dB
Price: € 2300 (excl. VAT)
Availability: Usually in stock

Pricing and availability may change without notice.

RF Power Amplifier Module, 1–6 GHz, 20 W, +28 V
Product image for reference. Final appearance based on asked configuration.

Overview

Highlights

  • Wideband operation: 1–6 GHz
  • Output power: 20 W (43 dBm)
  • High gain: 43–45 dB with ±1.2 dB flatness
  • Integrated current and temperature sensors
  • 28 V single supply operation

Usage note

  • External heatsink or cold-plate cooling is required
  • Monitor VTEMP and VCUR during operation
  • Verify load match before applying high output levels
  • Follow the recommended bias sequencing before applying RF drive

Applications

  • Radar systems
  • Communication jammers
  • Test instrumentation
  • Broadband RF subsystems

Key specifications

Frequency range 1 to 6 GHz
Gain +43 to +45 dB
Gain flatness ±1.2 dB
Output power (CW, Psat) 20 W nominal / 43 dBm
Nominal input drive level 0 dBm nominal, +10 dBm max
Efficiency 30% typical at Psat
Quiescent current (IDQ) 1.5 A typ, 2 A max
Input VSWR ≤ 1.5
2nd harmonic -12 dBc typical
3rd harmonic -15 dBc typical
Spurious suppression -70 dBc typical
OIP3 TBD
Switching speed < 50 µs
DC supply voltage +28 VDC single supply
Absolute max supply voltage +30 V
RF input power, CW (absolute max) +10 dBm
Output VSWR (no damage) 2:1 all phase angles
Export classification EAR 99

Values at +28 VDC, 25 °C, ZS = ZL = 50 Ω unless otherwise noted. Specifications subject to change without notice.

Control & interface

DB-9 control connector

Pin 1 Vcc: +28 V DC power input
Pin 2 Vcc: +28 V DC power input
Pin 3 Vcc: +28 V DC power input
Pin 4 GND: power ground
Pin 5 GND: power ground
Pin 6 GND: power ground
Pin 7 VTEMP: temperature sensor output (10 mV/°C)
Pin 8 VCUR: current sensor output (100 mV/A)
Pin 9 PAEN: enable input (+3.3 V = ON, 0 V = OFF)

Bias sequencing

  • Apply +28 V supply to Vcc (pins 1–3 tied together)
  • Ensure RF input signal is disabled during initial power-up
  • Enable amplifier by setting PAEN (pin 9) to +3.3 V
  • Apply RF input after the amplifier is enabled

Monitoring outputs

  • VTEMP: Analog voltage proportional to temperature, 10 mV/°C
  • VCUR: Analog voltage proportional to current, 100 mV/A

Mechanical

  • RF input connector: SMA Female
  • RF output connector: SMA Female
  • DC / control connector: D-sub 9-pin male
  • Cooling method: external heatsink / cold plate
  • Weight: ≤ 2 kg
RF Power Amplifier Module mechanical outline drawing

All dimensions are in millimeters unless otherwise specified. Mechanical drawing is provided for reference only.

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